Double gate static induction thyristor and method for manufactur

Details Double gate static induction thyristor and method for manufactur Double gate static induction thyristor and method for manufactur

1988-07-14

1989-06-06

Clawson, Jr., Joseph E.

357 20, 357 22, 357 56, H01L 2974

Patent

active

048376086

ABSTRACT:
A double gate static induction thyristor comprises an n.sup.- semiconductor substrate having first and second principal surfaces opposite to each other. An n.sup.- epitaxial semiconductor layer is formed on the first principal surface of the substrate, and a p.sup.- epitaxial semiconductor layer is formed on the second principal surface of the substrate. A cathode electrode is deposited on the surface of the n.sup.- epitaxial layer, and an anode electrode is deposited on the surface of the p.sup.- epitaxial layer. In addition, a first gate electrode is formed on the first principal surface of the substrate, and a second gate electrode is formed on the second principal surface of the substrate.

REFERENCES:
patent: 2790037 (1957-04-01), Shockley
patent: 3571675 (1971-03-01), Faust
patent: 4086611 (1978-04-01), Nishizawa et al.
patent: 4137545 (1979-01-01), Becke
patent: 4275408 (1981-06-01), Yukimoto
Nishizawa, Terasaki, and Shibata, "Field-Effect Transistor Versus Analog Transistor (Static Induction Transistor)", IEEE Trans. Electron Devices, vol. ED-22, No. 4 (Apr. 1975).

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