1989-10-18
1991-06-25
Hille, Rolf
357 22, 357 39, 357 56, H01L 2974
Patent
active
050271806
ABSTRACT:
A double gate static induction thyristor comprises a semiconductor substrate, a first gate region formed at a first principal surface of the substrate, and a first semiconductor region of a first conduction type formed on the same first principal surface. A second gate region is formed at a second principal surface of the substrate, and a second semiconductor region of a second conduction type is formed on the same second principal surface. Gate electrodes are formed on the first and second gate regions, and main electrodes are formed on the first and second semiconductor regions, so that portions of the semiconductor regions surrounded by the gate regions form a current path between the main electrodes. Further, impurity is deeply diffused in portions of the first and second gate regions formed with the gate electrodes.
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Kondoh Hisao
Nishizawa Jun-ichi
Hille Rolf
Loke Steven
Mitsubishi Electric Corporation
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