Double-gate semiconductor device

Details Double-gate semiconductor device Double-gate semiconductor device

2005-02-08

2005-02-08

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S250000, C257S328000, C257S347000, C257S388000, C257S407000, C257S412000, C257S900000, C438S193000, C438S195000, C438S284000

Reexamination Certificate

active

06853020

ABSTRACT:
A double-gate semiconductor device includes a substrate, an insulating layer, a fin and two gates. The insulating layer is formed on the substrate and the fin is formed on the insulating layer. A first gate is formed on the insulating layer and is located on one side of the fin. A portion of the first gate includes conductive material doped with an n-type dopant. The second gate is formed on the insulating layer and is located on the opposite side of the fin as the first gate. A portion of the second gate includes conductive material doped with a p-type dopant.

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