Double gate NLDMOS SCR device with controllable switching...

Details Double gate NLDMOS SCR device with controllable switching... Double gate NLDMOS SCR device with controllable switching...

2007-03-15

2009-12-22

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Bidirectional rectifier with control electrode

C257S119000

Reexamination Certificate

active

07635614

ABSTRACT:
An NLDMOS SCR device based on an LDMOS fabrication process includes a dual gate to provide controllable switching characteristics to allow it to be used for ESD protection of fast switching voltage regulators.

REFERENCES:
patent: 6720624 (2004-04-01), Vashchenko et al.
patent: 6911679 (2005-06-01), Vashchenko et al.

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