Double gate FET and process for manufacturing same

Details Double gate FET and process for manufacturing same Double gate FET and process for manufacturing same

1993-05-05

1994-03-22

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257270, 257347, 257507, 357 2314, 357 59, 437 40, 437235, 437911, 437913, H01L 2978, H01L 21265

Patent

active

052967271

ABSTRACT:
A high speed and highly functional MOSFET having a thin channel formed in a single crystalline layer is controlled by voltages applied to both an upper gate electrode and a buried gate layer that sandwich the channel therebetween.

REFERENCES:
patent: 4748485 (1988-05-01), Vasudev
patent: 4929568 (1990-05-01), Beasom et al.

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