Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1998-07-22
2000-02-22
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
313310, 313311, 313336, 445 50, H01L 2906, H01L 2912
Patent
active
06028322&
ABSTRACT:
A field emission display includes a substrate, a plurality of emitters formed on the substrate, a semiconductor device formed in or on the substrate for controlling the flow of electrons to the emitters and a dielectric layer formed on the substrate. An extraction grid is formed on the dielectric layer substantially in a plane of tips of the plurality of emitters and includes openings each surrounding one of the emitters. The display also includes a transparent viewing screen, a transparent conductor formed on the viewing screen and a cathodoluminescent layer formed on the transparent conductor. The semiconductor device includes a gate dielectric and a field oxide. Significantly, the field oxide includes an interfacial region acting as a trapping and recombination site for mobile charge carriers. As a result, the semiconductor device is more robust and is better able to resist parameter shifts or performance degradation due to exposure to X-rays and photons that are incidentally generated along with the desired images on the display. This results in a more robust field emission display.
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Micro)n Technology, Inc.
Ngo Ngan V.
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