Double-epitaxy heterojunction bipolar transistors for high speed

Details Double-epitaxy heterojunction bipolar transistors for high speed Double-epitaxy heterojunction bipolar transistors for high speed

1994-04-13

1997-07-15

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257586, 257592, H01L 2973, H01L 2970

Patent

active

056486669

ABSTRACT:
This invention discloses a heterojunction bipolar transistor (HBT) which includes a relatively thin intrinsic collector region and a relatively thick extrinsic collector region such that collector-base capacitance is reduced and electron transit time is maintained. The fabrication of the HBT includes loading a semi-insulating substrate into an molecular beam epitaxy machine, and growing a sub-collector contact layer, a bottom collector layer and a top collector layer on the substrate. Next, the substrate is removed from the molecular beam epitaxy machine and the top collector layer is etched by a photolithographic process to produce separate intrinsic and extrinsic collector regions. Then, the substrate is again loaded into the molecular beam epitaxy machine so that the base and emitter layers can be grown. And finally, the emitter layer is etched to form an emitter mesa only over the intrinsic semiconductor region.

REFERENCES:
patent: 4111720 (1978-09-01), Michel et al.
patent: 5162243 (1992-11-01), Shreit et al.
Ghosh; "Pedestal Collector Transistor with Retarded Base"; Oct. 1971; IBM Technical Disclosure Bulletin vol. 14, No. 5 pp.1641-1642.
Ota, Y. et al., "Properties of MBE-Grown and 0+ Implanted GaAs and Their Application to the Formation of a Buried Collector of an A1GaAs/GaAs HBT", J. Appl. Phys. 64(2), 15 Jul. 1988.
Asbeck, P. et al., IEEE Electron Devices Letter Ed1-5, 310 (1984).
Kim, M.E. et al, "GaAs/A1GaAs Heterojunction Bipolar Transistors and Integrated Circuits with High Current Gain for Device Geometries", GaAs IC Symposium Technical Digest, pp. 163-166 (1986).

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