Double downset double dambar suspended leadframe

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame

Reexamination Certificate

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Details

C257S670000, C257S679000, C257S680000, C438S123000, C438S106000

Reexamination Certificate

active

06911718

ABSTRACT:
In accordance with the present invention, there is provided a memory card which is fabricated through the use of a leadframe comprising an outer dambar defining a central opening, and an inner dambar which is disposed within the central opening. The leadframe further includes a plurality of contacts which are disposed within the central opening and attached to the outer dambar. Disposed within the central opening is at least one die pad, with a plurality of conductive traces extending from respective ones of the contacts toward the die pad. At least one tie bar is attached to and extends between the die pad and each of the outer and inner dambars. The tie bar has at least two downsets formed therein such that the die pad, the outer dambar, and the inner dambar extend along respective ones of at least three spaced, generally parallel planes, the plane of the inner dambar being disposed between the planes of the die pad and the outer dambar.

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