Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – active junction...
Patent
1991-11-13
1993-08-03
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, active junction...
257530, 3652257, H01L 27020, H01L 27112, G11C 11340
Patent
active
052332063
ABSTRACT:
The present invention provides a programmable structure for programmable integrated circuits, such as programmable read-only memory (PROM) which utilizes one-sided ozone spacers constructed on the digitlines as well as on the wordlines thereby providing two, one time programmable nodes at each digit/word/digit' intersection. An oxide
itride/oxide layer (ONO) is used as an interface between underlying parallel rows of digit lines, having one-sided ozone spacers, and overlying parallel columns of word lines, also having one-sided ozone spacers, and further overlying parallel rows' of digitlines' in a programmable read only memory. With a lower level of digitlines passing under a middle level of wordlines and an upper level of digitlines' passing over the middle level of wordlines, a row/column/digit' matrix is formed thereby providing a programmable row/column/row' matrix in a memory array. Each crossing point of the digit/word lines and the word/digit' lines in the matrix will be permanently programmed to either a one or a zero by rupturing the thin ONO dielectric interface by applying the appropriate voltage potential between the associated digit/word/digit' line conductors.
REFERENCES:
patent: 4981810 (1991-01-01), Fazan et al.
patent: 5053351 (1991-10-01), Fazan et al.
patent: 5084406 (1992-01-01), Rhodes et al.
patent: 5126290 (1992-06-01), Lowrey et al.
Durcan D. Mark
Lee Roger R.
Lowrey Tyler A.
Hardy David B.
Hille Rolf
Micro)n Technology, Inc.
Paul David J.
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