Double diffused metal oxide semiconductor structure with isolate

Details Double diffused metal oxide semiconductor structure with isolate Double diffused metal oxide semiconductor structure with isolate

1975-08-04

1977-01-04

Lynch, Michael J.

357 41, 357 48, H01L 2978

Patent

active

040018601

ABSTRACT:
Metal oxide semiconductor structure having precisely grown channel with the source and drain isolated from each other by a PN junction.
In the method, a double diffusion is carried out through the same opening in an oxide or insulating layer to obtain a very narrow precise channel region with minimum spreading and which can be utilized with a P-type substrate to provide PN isolation between the source and drain.

REFERENCES:
patent: 3268827 (1966-08-01), Carlson et al.
patent: 3315096 (1967-04-01), Carlson et al.
patent: 3600642 (1971-08-01), Allison et al.

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