Double diffused leadout for a semiconductor device

Details Double diffused leadout for a semiconductor device Double diffused leadout for a semiconductor device

1991-01-25

1992-04-21

James, Andrew J.

357 26, 357 80, 357 55, H01L 2990

Patent

active

051073099

ABSTRACT:
A structure and a device which allow low resistance connections to internal circuit devices comprising a double diffused leadout is described. The first leadout diffusion is lightly doped with dopant from either chemical group III or V to constitute N- or P- type material respectively. The lightly doped region has a high resistivity. The second diffusion is diffused, using a dopant from the same chemical group as the first dopant, into the first diffusion. The second diffusion is diffused with enough dopant to constitute N.sup.+ or P.sup.+ material and has a low resistivity. The double diffused leadout creates a low resistance connection to the internal circuitry of an IC device while maintaining breakdown with the protective overlayer.

REFERENCES:
patent: 4298401 (1981-11-01), Nuez et al.
patent: 4314226 (1982-02-01), Oguro et al.
patent: 4605948 (1986-08-01), Martinelli
patent: 4658279 (1987-04-01), Guckel
patent: 4766469 (1988-08-01), Hill

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