Double diffused CMOS with Schottky to drain contacts

Details Double diffused CMOS with Schottky to drain contacts Double diffused CMOS with Schottky to drain contacts

1990-03-27

1991-10-29

James, Andrew J.

357 15, 357 43, 357 44, 357 86, H01L 2702, H01L 2948, H01L 2956

Patent

active

050619810

ABSTRACT:
This is an invention for a complementary transistor pair which includes an n-channel double-diffused-metal-oxide-semiconductor transistor having a source, a drain and an insulated gate. A Schottky barrier junction diode is formed to the drain of the n-channel transistor. The transistor pair also includes a p-channel double-diffused-metal-oxide-semiconductor transistor which also has a source, a drain and an insulated gate. A second Schottky barrier junction diode is formed to the drain of the p-channel transistor. The two Schottky diodes are electrically coupled to one another.

REFERENCES:
patent: 4513309 (1985-04-01), Cricchi
patent: 4593458 (1986-06-01), Adler
patent: 4677735 (1987-07-01), Malhi

Affiliated with

Also associated with

Rating

Double diffused CMOS with Schottky to drain contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Double diffused CMOS with Schottky to drain contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double diffused CMOS with Schottky to drain contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1403126