Double destruction phase shift mask

Details Double destruction phase shift mask Double destruction phase shift mask

1994-10-05

1996-04-23

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430321, 430324, 216 51, 216 46, G03F 900

Patent

active

055102140

ABSTRACT:
This invention describes the use and methods of fabrication of a double destruction phase shift mask. The double destruction phase shift mask combines transparent phase shifting regions and attenuating phase shifting regions to form interference patterns in light projected through the mask which reduce the light intensity to nearly zero in the regions of the projected light corresponding to pattern elements. This eliminates the ghost line which can occur with conventional phase shifting masks. The double destruction phase shift mask provides improved depth of focus and edge definition.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5190836 (1993-03-01), Nakagawa et al.
patent: 5194344 (1993-03-01), Cathey, Jr. et al.
patent: 5194345 (1993-03-01), Rolfson
patent: 5194346 (1993-03-01), Rolfson et al.
patent: 5208125 (1993-05-01), Lowrey et al.
patent: 5217830 (1993-06-01), Lowrey
patent: 5225035 (1993-07-01), Rolfson
patent: 5286581 (1994-02-01), Lee
patent: 5290647 (1994-03-01), Miyazaki et al.
patent: 5380608 (1995-01-01), Miyashita
"Lithography's Leading Edge, Part 1: Phase Shift Technology", pub. in Semiconductor International, Feb. 1992, pp. 42-47.

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