Double density MRAM with planar processing

Details Double density MRAM with planar processing Double density MRAM with planar processing

2006-04-18

2006-04-18

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S090000, C365S048000

Reexamination Certificate

active

07029926

ABSTRACT:
The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.

REFERENCES:
patent: 6750069 (2004-06-01), Durcan et al.
patent: 6927073 (2005-08-01), Huggins
patent: 2004/0004889 (2004-01-01), Asao et al.
patent: 2004/0032010 (2004-02-01), Kools et al.

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