Double crucible for growing a silicon single crystal

Details Double crucible for growing a silicon single crystal Double crucible for growing a silicon single crystal

1995-04-11

1995-12-12

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117 31, 117213, C30B 3500

Patent

active

054740223

ABSTRACT:
There is provided a double crucible for growing a silicon single crystal in which the partition wall 17 in the shape of ring is concentric with the main crucible 6 in the shape of bottomed cylinder and the lower end of the partition wall 17 is fixed on the inner bottom of the main crucible, and thus the outer crucible 18 and the inner crucible 19 are formed inside the main crucible. The partition wall 17 is uniform in thickness and has introducing holes 20 in its lower part which link the outer crucible with the inner crucible. The partition wall is made so that the inner diameter of its lower part may be smaller than the inner diameter of its upper part. Supposing that A is the diameter of the partition wall at a level of molten silicon, h is a depth from the surface of the molten silicon to the introducing holes, V(out) is an amount of molten silicon stored in the outer crucible, and V(in) is an amount of molten stored in the inner crucible, the relation of D/A=1.5 to 3, 2h/A>1, and V(out)/V(in)=0.4 to 0.9, is satisfied. The invention reduces the number of coarse COPs of 0.3 .mu.m or greater in diameter generated after Sc-1 cleaning on the surface of a silicon wafer made of a single crystal bar grown without making larger in size the furnace of a silicon single crystal continuously growing apparatus.

REFERENCES:
patent: 4203951 (1980-05-01), Goriletsky et al.
patent: 4352784 (1982-10-01), Lin
patent: 5030315 (1993-07-01), Washizuka et al.
patent: 5279798 (1994-01-01), Kaneto et al.

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