Double channel semiconductor laser and method of fabricating it

Details Double channel semiconductor laser and method of fabricating it Double channel semiconductor laser and method of fabricating it

1992-07-20

1994-01-11

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, 437129, H01S 319

Patent

active

052788580

ABSTRACT:
The energization current of an indium phosphide or gallium arsenide double channel semiconductor laser is confined within a laser stripe by near and far current blocking arrangements. The near current blocking arrangements are formed by a blocking junction formed in two lateral channels delimiting the stripe. The far current blocking arrangements are formed by an iron-doped semi-insulative layer grown epitaxially before the lateral channels are etched. A particular application is to the fabrication of pump lasers used in optical amplifiers of optical fiber links.

REFERENCES:
patent: 4870650 (1989-09-01), Mink
patent: 4947400 (1990-08-01), Dutta
Patent Abstracts of Japan, vol. 8, No. 250 (E-279) Nov. 16, 1984 & JP-A-59 125 684 (Nippon Denki K.K.).
Patent Abstracts of Japan, vol. 14, No. 190 (E-91) Apr. 18, 1990 & JP-A-2 039 483 (NEC Kansai Ltd.).
Japanese Journal of Applied Physics, vol. 25, No. 6, Jun. 1986, Part II, Tokyo, Japan, pp. 435-436.
S. L. Shi et al.: "BH InGaAsP lasers with an LPE grown semi-insulating layer".
Patent Abstracts of Japan, vol. 12, No. 261 (E-636) Jul. 22, 1988 & JP-A-63 046 790 (NEC Corp.).
Neues Aus Der Technik, No. 1, Feb. 20, 1987, Wurzburg, Germany, p. 6; "Eisenimplantierter DCPBH-Laser".

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