Double-channel planar heterostructure semiconductor laser

Details Double-channel planar heterostructure semiconductor laser Double-channel planar heterostructure semiconductor laser

1983-09-15

1986-06-24

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, 372 48, H01S 319

Patent

active

045970858

ABSTRACT:
A double-channel planar buried-heterostructure semiconductor laser diode (DC-PBH LD) has improved high frequency response characteristics due to lower p-n junction capacitance resulting from the interposition of a low carrier concentration blocking layer between p-n-p-n blocking layers of the DC-PBH LD structure.

REFERENCES:
patent: 4425650 (1984-01-01), Mito et al.
Tsang et al., "A New Lateral Selective-Area Growth by Liquid-Phase Epitaxy: The Formation of a Lateral Double-Barrier Buried-Heterostructure Laser", Appl. Phys. Lett., 40(11) Jun. 1, 1982, p. 942.

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