Double channel planar buried heterostructure laser with periodic

Details Double channel planar buried heterostructure laser with periodic Double channel planar buried heterostructure laser with periodic

1982-12-07

1986-03-11

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 50, 372 96, H01S 319

Patent

active

045758514

ABSTRACT:
A double heterostructure semiconductor laser device has a first wide bandgap layer, forming an optical guide layer, a portion of which is provided with periodic corrugations to form a distributed Bragg reflector. The optical guide layer extends along a major surface of the substrate in the direction of laser propagation. A narrow bandgap active region over which is disposed a second wide bandgap region, forming a first cladding layer, are both disposed over a portion of the optical guide layer in the direction of laser propagation to produce an amplifier section. The remaining portion of the optical guide layer in the direction of laser propagation is disposed over that portion of the substrate containing the distributed Bragg reflector to thereby form a reflector section. First and second channels are formed in said device in the direction of laser propagation to produce a mesa, with additional cladding layers, forming current blocking layers, being disposed in said channels but not over the mesa, to electrically isolate said mesa.

REFERENCES:
patent: 4045749 (1977-08-01), Burnham et al.
patent: 4425650 (1984-01-01), Mito et al.
Kobayashi et al., "CW Operation of 1.5-1.6 .mu.m Wavelength GaInAsP/InP Buried-Heterostructure Integrated Twin-Guide Laser with Distributed Bragg Reflector", Electronics Letters, May 28, 1981, vol. 17, No. 11, pp. 366-368.
Walpole et al., "Distributed Feedback Pb.sub.1-x Sn.sub.x Te Double-Heterostructure Lasers", Applied Physics Letters, vol. 29, No. 5, Sep. 1, 1976, pp. 307-309.

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