Double channel planar buried heterostructure laser

Details Double channel planar buried heterostructure laser Double channel planar buried heterostructure laser

1982-10-18

1985-06-25

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, H01S 319

Patent

active

045258414

ABSTRACT:
A buried heterostructure semiconductor laser diode with improved efficiency, CW operating temperature and output characteristic is comprised of a semiconductor substrate of a first conductivity type and includes successively at least a first cladding semiconductor layer of the first conductivity type, an active semiconductor layer, and a second cladding semiconductor layer of a second conductivity type. The active semiconductor layer has a narrower bandgap than those of the first and second cladding semiconductor layers. The multilayer double heterostructure has a stripe geometry with channels formed along both sides of the stripe and extending down to the first cladding layer. A current blocking layer is formed on the multilayer double heterostructure except for the top surface of the stripe geometry, in order to block a current flow therethrough.

REFERENCES:
patent: 4425650 (1984-01-01), Mito et al.

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