Double channel heterostructures

Details Double channel heterostructures Double channel heterostructures

1991-06-28

1992-10-27

Mintel, William

357 4, 357 16, 357 22, H01L 2714

Patent

active

051594218

ABSTRACT:
A semiconductive device includes a dual channel heterostructure in which a pair of quantum wells separated by a thin barrier layer have their band gaps shifted by applied gate voltages between overlap and non-overlap relationships. When the gaps are in an overlap relationship intraband tunneling through the barrier between the two quantum wells serves to introduce charge carriers in the channels to make them conducting. A specific embodiment uses quantum wells of indium arsenide and gallium antimonide in a host lattice of aluminum antimonide.

REFERENCES:
patent: 4743951 (1988-05-01), Chang et al.
patent: 4806998 (1989-02-01), Vinter et al.
patent: 4821093 (1989-04-01), Iafrate et al.

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