Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-05-19
1994-09-27
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 12, 257 15, 257 25, 257 26, 257 29, 257198, H01L 29161, H01L 2712, H01L 2968
Patent
active
053509315
ABSTRACT:
One or more double barrier resonant tunneling filters are provided for electron propagation mode control in nanostructure quantum wire electron waveguides and in quantum interference devices in the waveguide.
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Choi et al, "Self-Consistent Resonant States and Phase Coherence in a Wide ouble-Barrier Structure," Appl. Phys. Lett., vol. 54, No. 4 Jan. 23, 1989, pp. 359-361.
GaAs and Related Compounds-1988, Inst. of Physics, Philadelphia, 1989 by Sakaki.
Nanostructure Physics and Fabrication, Academic Press, San Diego 1989 articles by F. Sols et al, entitled "Criteria For Transistor Action Based on Quantum Interference Phenomena" by D. C. Miller et al, entitled, Modulation of the Conductance of T-Shaped Electron Waveguide Structures with a Remote Gate, by S. Bandyopadhyay et al, entitled, Quantum Devices Based on Phase Coherent Lateral Quantum Transport.
Harvey James F.
Lux Robert A.
Anderson William H.
Hille Rolf
Saadat Mahshid
The United States of America as represented by the Secretary of
Zelenka Michael
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