Double barrier double heterostructure laser

Details Double barrier double heterostructure laser Double barrier double heterostructure laser

1981-05-29

1984-03-20

Davie, James W.

357 16, 357 90, H01S 318, H01S 319

Patent

active

044384467

ABSTRACT:
A double barrier double heterostructure laser is described in which relatively narrow beam divergence is obtained by the presence of wide bandgap, with respect to the cladding layers and barrier layers intermediate the active and cladding layers.

REFERENCES:
patent: 4328469 (1982-05-01), Scifres et al.
Tsang, "Very Low Current Threshold GaAs-Al.sub.x Ga.sub.1-x As . . .", Appl. Phys. Lett., vol. 36, No. 1, Jan. 1, 1980, pp. 11-14.
Tsang et al., "The Effect of Substrate Temperature . . .", Appl. Phys. Lett., vol. 36, No. 2, Jan. 15, 1980, pp. 118-120.

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