Double-alternating phase-shifting mask

Details Double-alternating phase-shifting mask Double-alternating phase-shifting mask

1998-05-21

2000-05-02

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

060570644

ABSTRACT:
A double-alternating phase-shifting mask (PSM) is provided for use in photolithography for pattern definition of contact holes in semiconductor fabrication, which can eliminate the side-lobe effect that would otherwise cause ghost lines in the resulted pattern definition. The double-alternating PSM comprises a quartz substrate and a masked area formed on said quartz substrate with the unmasked areas being defined as contact hole patterns. The masked area includes a first shifter layer formed over said quartz substrate and a second shifter layers formed over said quartz substrate at those positions each substantially in the geometric center of each group of neighboring contact hole patterns.

REFERENCES:
patent: 5585210 (1996-12-01), Lee et al.
patent: 5725969 (1998-03-01), Lee

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