Double active layer semiconductor laser

Details Double active layer semiconductor laser Double active layer semiconductor laser

1983-06-10

1986-12-02

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, 372 48, H01S 319

Patent

active

046270655

ABSTRACT:
A double active layer semiconductor laser having single longitudinal mode operation is described. The laser comprises first and second active layers which are separated from each other by an intermediate barrier layer but are optically coupled to each other so that, effectively, single mode operation results.

REFERENCES:
L. A. Coldren et al., "Monolithic Two-Section GaInAsP/InP Active-Optical-Resonator Devices Formed by Reactive Ion Etching," Applied Physics Letters, vol. 38, No. 5, Mar. 1, 1981, pp. 315-317.
S. Akiba et al., "Low-Threshold-Current Distributed-Feedback InGaAsP/InP CW Lasers," Electronics Letters, vol. 18, No. 2, Jan. 21, 1982, pp. 77-78.
Y. Abe et al., "Room-Temperature CW Operation of 1.60 .mu.m GaInAsP/InP Buried-Heterostructure Integrated Laser with Butt-Jointed Built-In Distributed-Bragg-Reflection Waveguide," Electronics Letters, vol. 18, No. 10, May 13, 1982, pp. 410-411.
D. J. Malyon et al., "102 km Unrepeatered Monomode Fibre System Experiment at 140 Mbit/s with an Injection Locked 1.52 .mu.m Laser Transmitter," Electronics Letters, vol. 18, No. 11, May 27, 1982, pp. 445-447.
T. Lee et al., "Short-Cavity InGaAsP Injection Lasers: Dependence of Mode Spectra and Single-Longitudinal-Mode Power on Cavity Length," IEEE Journal of Quantum Electronics, vol. QE-18, No. 7, Jul. 1982, pp. 1101-1113.
H. Nagai et al., "InGaAsP/InP Dual-Wavelength BH Laser", Japanese Journal of Applied Physics, vol. 21, No. 3, Mar. 1982, pp. L173-L175.

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