Coating apparatus – Gas or vapor deposition – With treating means
Patent
1998-09-28
2000-04-18
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
118712, 118715, 156345, C23C 1600
Patent
active
060502185
ABSTRACT:
Method and apparatus for causing ions to impact a workpiece implantation surface. A process chamber defines a chamber interior into which one or more workpieces can be inserted for ion treatment. An energy source sets up an ion plasma within the process chamber. A support positions one or more workpieces within an interior region of the process chamber so that an implantation surface of the one or more workpieces is positioned within the ion plasma. A pulse generator in electrical communication with the workpiece support applies electrical pulses for attracting ions to the support. One or more dosimetry cups including an electrically biased ion collecting surface are disposed around the workpiece support to measure implantation current. An implantation controller monitors signals from the one or more dosimetry cups to control ion implantation of the workpiece.
REFERENCES:
patent: 4539217 (1985-09-01), Farley
patent: 4587433 (1986-05-01), Farley
patent: 4744938 (1988-05-01), Ruddy
patent: 4764394 (1988-08-01), Conrad
patent: 5654043 (1997-08-01), Shao et al.
patent: 5658423 (1997-08-01), Angell et al.
patent: 5728253 (1998-03-01), Saito et al.
patent: 5814823 (1998-09-01), Benveniste
patent: 5883931 (1999-03-01), Adibi et al.
D.M. Jamba, "Dosimetry Measurement In Ion Implanters", Nuclear Instruments and Methods 189 pp. 253-263, North-Holland Publishing Company (1981).
C.M. McKenna, " High Current Dosimetry Techniques" Radiation Effects, vol. 44, pp. 93-110, (1979).
D.M. Jamba, Semiconductor Measurement Technology: Some Aspects of Dose Measurement For Accurate Ion Implantation, NBS Special Publication 400-39, pp. 1-36 (Issued Jul. 1977).
D.M. Jamba, "Secondary Particle Collection In Ion Implantation Dose Measurement" Rev. Sci. Instrum., vol. 49, No. 5, pp. 634-638 (May 1978).
E.P.EerNisse, G.D. Peterson, and D.G. Schueler "Ion Beam Profile Monitor" Rev. Sci. Instrum., vol. 46, No. 3 pp. 266-268 (Mar. 1975).
Chen Jiong
Denholm A. Stuart
Kellerman Peter
Bueker Richard
Eaton Corporation
Fieler Erin
LandOfFree
Dosimetry cup charge collection in plasma immersion ion implanta does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dosimetry cup charge collection in plasma immersion ion implanta, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dosimetry cup charge collection in plasma immersion ion implanta will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2328658