Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1997-01-17
1998-06-02
Nguyen, Kiet T.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
H01J 37317
Patent
active
057604096
ABSTRACT:
Electrical charge neutralization effects are known to be factors that affect the dose or concentrations of beam treatment by high current implanters. Raising beam energies to 1 MeV and beyond requires an understanding of the effects of both charge stripping and charge neutralization as well as a numerically efficient model compensating for these effects. Charge stripping generates ions of a higher charge state and may cause the measured electronic current from a Faraday cup to overestimate the true particle current. An analysis is based on the concept of an effective charge state for an ion beam and results in a more general interpretation that covers both the charge stripping effect as well as ion neutralization. Dose control using the techniques requires two adjustable parameters: an apparent cross section of interaction between the beam and particles in the beam path and the ratio of the final steady charge state to the initial charge state.
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Chen Hank
Sinclair Frank
Sugitani Michiro
Eaton Corporation
Nguyen Kiet T.
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