Doping procedures for semiconductor devices

Details Doping procedures for semiconductor devices Doping procedures for semiconductor devices

1989-06-30

1991-06-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG41, 148DIG48, 148DIG71, 148DIG94, 437 81, 437905, 437963, 437971, H01L 2120

Patent

active

050249673

ABSTRACT:
A process is described for making semiconductor devices with highly controlled doping profiles. The process involves minimizing or eliminating segregation effects caused by surface electric fields created by Fermi-level pinning. These electric fields act on dopant ions and cause migration from the original deposition site of the doplant ions. Dopant ions are effectively shielded from the surface electric fields by illumination of the growth surfaces and by background doping. Also, certain crystallographic directions in certain semiconductors do not show Fermi-level pinning and lower growth temperatures retard or eliminate segregation effects. Devices are described which exhibit enhanced characteristics with highly accurate and other very narrow doping profiles.

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