Doping of source-drain contacts

Details Doping of source-drain contacts Doping of source-drain contacts

2006-09-12

2006-09-12

Estrada, Michelle (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C438S099000, C257SE51032, C257SE51017, C257SE51046

Reexamination Certificate

active

07105854

ABSTRACT:
A method for forming an electronic device on a substrate, the device including a first electrically conductive region, a second electrically conductive region spaced from the first electrically conductive region and a region of an semiconductor material between the first and second electrically conductive regions and in contact with the first electrically conductive region, the method comprising doping an interfacial zone comprising least part of the periphery of the semiconductor material at the interface between the semiconductor material and the first electrically conductive region by means of a dopant contained in the first conductive material and capable of doping the semiconducting material so as to thereby enhance the conductivity of the interfacial zone.

REFERENCES:
patent: 2003/0059975 (2003-03-01), Sirringhaus et al.
patent: 2003/0164495 (2003-09-01), Ong et al.
patent: 2004/0002176 (2004-01-01), Xu
patent: 2004/0077122 (2004-04-01), Wu et al.

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