Doping of silicon layers

Details Doping of silicon layers Doping of silicon layers

1995-06-30

1998-01-27

Trinh, Michael

Fishing, trapping, and vermin destroying

437141, 437164, H01L 218234

Patent

active

057121761

ABSTRACT:
A process for forming a P.sub.2 O.sub.5 layer suitable for diffusion doping polysilicon gates is disclosed. The inventive process has a reduced thermal budget and helps to eliminate subsequent gate oxide roughness.

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patent: 5244831 (1993-09-01), Hindman et al.
patent: 5286660 (1994-02-01), Chiou et al.
patent: 5494852 (1996-02-01), Gwin

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