Doping of SiC structures and methods associated with same

Details Doping of SiC structures and methods associated with same Doping of SiC structures and methods associated with same

2006-04-19

2009-02-10

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257SE21054, C257SE21065, C438S931000

Reexamination Certificate

active

07488984

ABSTRACT:
Doped silicon carbide structures, as well as methods associated with the same, are provided. The structures, for example, are components (e.g., layer, patterned structure) in MEMS structures. The doped silicon carbide structures may be highly conductive, thus, providing low resistance to electrical current. An in-situ doping process may be used to form the structures. The process parameters can be selected so that the structures have a low residual stress and/or low strain gradient. Thus, the structures may be formed having desired dimensions with little (or no) distortion arising from residual stress and/or strain gradient. The high conductivity and mechanical integrity of the structures are significant advantages in MEMS devices such as sensors and actuators.

REFERENCES:
patent: 6359276 (2002-03-01), Tu
patent: 2002/0096684 (2002-07-01), Brandes et al.
patent: 2003/0045120 (2003-03-01), Hu et al.
patent: 2006/0008661 (2006-01-01), Wijesundara et al.
patent: 2006/0276027 (2006-12-01), Lu et al.

Affiliated with

Also associated with

Rating

Doping of SiC structures and methods associated with same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Doping of SiC structures and methods associated with same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Doping of SiC structures and methods associated with same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4115850