Doping of IIB-VIA semiconductors during molecular beam epitaxy u

Details Doping of IIB-VIA semiconductors during molecular beam epitaxy u Doping of IIB-VIA semiconductors during molecular beam epitaxy u

1990-08-24

1993-09-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437126, 437987, H01L 2100, H01L 2102, H01L 21203

Patent

active

052486311

ABSTRACT:
A method and apparatus for enhanced doping of IIB-VIA semiconductors through the use of a free-radical source is described. The process involves the simultaneous production of beams of free-radicals together with group IIB molecules or atoms and group VIA molecules or atoms in a standard molecular beam epitaxy crystal growth system. These beams react on a substrate producing single crystal films of doped IIB-VIA semiconductors such as ZnSe:N, for example. The improved doping characteristics result from the high reactivity of radicals produced by the free-radical source with the surface of the growing crystal.

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