Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1993-07-21
1996-11-12
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 78, 257 94, 257201, 257442, 257614, H01L 3300, H01L 2922, H01L 310328, H01L 3100
Patent
active
055742963
ABSTRACT:
An electromagnetic radiation transducer is provided having a p-type ZnSe layer and an n-type layer. The p-type ZnSe layer has a net donor to net acceptor ratio (N.sub.D /N.sub.A) of less than or equal to about 0.8. The net acceptor concentration is greater than about 5.times.10.sup.15 cm .sup.-3 and the resistivity is less than 15 .OMEGA.-cm. The p-type ZnSe layer is deposited by doping the ZnSe during fabrication with a neutral free-radical source.
REFERENCES:
patent: 3735212 (1973-05-01), Kun
patent: 3745073 (1973-07-01), Kun et al.
patent: 4081764 (1978-03-01), Christmann et al.
patent: 4735910 (1988-04-01), Mitsuyu et al.
patent: 4866007 (1989-09-01), Taguchi et al.
patent: 5103269 (1992-04-01), Tomomura et al.
patent: 5150191 (1992-09-01), Motegi et al.
"n-Type and p-Type Conductivity Control of ZnSe Grown by Metalorganic Molecular Beam Epitaxy Using Metholiodide and Ammonia," M. Migita et al, Journal of Crystal Growth III, 1991, pp. 776.varies.781.
R. M. Park, M. B. Troffer, C. M. Rouleau, J. M. DePuydt, and M. A. Haase, P-Type ZnSe By Nitrogen Atom Beam Doping During Molecular Beam Epitaxial Growth; Applied Physics Letters, American Institute of Physics-New York; vol. 57, No. 20; Nov. 12, 1990; pp. 2127-2129.
Journal of Crystal Growth; Mashito Migita et al.; vol. 101; No. 1/4; Apr. 1, 1990; Amsterdam, NL; P-Type Conduction of ZnSe Highly Doped with Nitrogen by Metalorganic Molecular Beam Epitaxy; pp. 835-840.
Journal of Crystal Growth; Hiroshi Kukimoto; vol. 101; No. 1/4; Apr. 1, 1990; Amsterdam, NL; Conductivity Control of ZnSe Grown by Movpe and its Application for Blue Electroluminescence; pp. 953-957.
Solar Cells; N. Romeo et al.; vol. 26; No. 3; Mar. 1989; P-type CdTe Thin Films Doped During Growth by Neutral High Energy Nitrogen Atoms; pp. 189-195.
A. Taike, M. Migita, & H. Yamamoto; P-Type Conductivity Control of ZnSe Highly Doped with Nitrogen by Metalorganic Molecular Beam Epitaxy; May 14, 1990; Applied Physics Letters; vol. 56, No. 20; pp. 1989-1991.
R. Clampitt & P. E. Hanley; Oxidation of Cold Copper Films with Oxygen Radicals; 1988; Super Conductor Science Technology; pp. 5 & 6.
Katsuhiro Akimoto, Takao Miyajima, & Yoshifumi Mori; Electroluminescence in an Oxygen-Doped ZnSe P-N Junction Grown by Molecular Beam Epitaxy; Apr. 1989; Japanese Journal of Applied Physics; vol. 28, No. 4; pp. L531-L534.
T. Mitsuyu, K. Ohkawa, & O. Yamazaki; Photoluminescence Properties of Nitrogen-Doped ZnSe Layers Grown by Molecular Beam Epitaxy with Low-Energy Ion Doping; Nov. 17, 1986; Applied Physics Letters; vol. 49; No. 20; pp. 1348-1350.
J. M. DePuydt, M. A. Haase, H. Cheng, & J. E. Potts; Electrical Characterization of P-Type ZnSe; Sep. 11, 1989; Applied Physics Letters; vol. 55, No. 11; pp. 1103-1105.
R. M. Park, H. A. Mar, & N. M. Salansky; Photoluminescence Properties of Nitrogen-Doped ZnSe Grown by Molecular Beam Epitaxy; Jul. 15, 1985; Journal of Applied Physics; vol. 52; No. 2; pp. 1047-1049.
M. A. Haase, H. Cheng, J. M. DePuydt, & J. E. Potts; Characterization of P-Type ZnSe; Jan. 1, 1990; Journal of Applied Physics; vol. 67; No. 1; pp. 448-452.
Ikuo Suemune, Kouichi Yamada, Hiroyuki Masato, Takashi Kanda, Yasou Kan, & Masamichi Yamanishi, Characterization of Nitrogen-Doped ZnS.sub.0.06 Se.sub.0.94 Films Grown by Metal-Organic Vapor-Phase Epitaxy; Nov. 1988; Japanese Journal of Applied Physics; vol. 27, No. 11; pp. L2195-L2198.
R. M. Park; C. M. rouleau, & M. B. Troffer; Strain-Free, Ultra-High Purity ZnSe Layers Grown by Molecular Beam Epitaxy; Mar. 1909; Journal of Materials Research; vol. 5, No. 3; pp. 475-477.
Khalid Shahzad, Diego J. Olego, & David A. Cammack; Optical Transitions in Ultra-High-Purity Zinc Selenide; Jun. 15, 1989; The American Physical Society; vol. 39, pp. 13016-13019.
P. J. Dean, W. Stutuius, G. F. Neumark, B. J. Fitzpatrick, & R. N. Bhargava; Ionization Energy of the Shallow Nitrogen Acceptor in Zinc Selenide; Feb. 15, 1983; American Physical Society; vol. 27, No. 4; pp. 2419-2428.
L. Kassel; H. Abad, J. W. Garland, & P. M. Raccah, and J. E. Potts, M. A. Haase, & H. Cheng; Study of the Interface of Undoped and P-Doped ZnSe with GaAs and AlAs; Jan. 1, 1990; Applied Physics Letters; pp. 42-44.
Katsuhiro Akimoto; Takao Miyajima, & Yoshufumi Mori; Electroluminescence from A ZnSe P-N Junction Fabricated by Nitrogen-Ion Implantation; Apr. 1989; Japanese Journal of Applied Physics; vol. 28, No. 4, pp. L528-L530.
State University System of Florida; UF/3M Company Collaborate on ZnSe Blue Led Development; Jul. 1990; Advanced Microelectronics and Materials Program; vol. 1, No. 4; pp. 1 and 8.
Cheng Hwa
DePuydt James M.
Haase Michael A.
Park Robert M.
Griswold Gary L.
Kirn Walter N.
Minnesota Mining and Manufacturing Company
Saadat Mahshid
Sherman Lorraine R.
LandOfFree
Doping of IIB-VIA semiconductors during molecular beam epitaxy e does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Doping of IIB-VIA semiconductors during molecular beam epitaxy e, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Doping of IIB-VIA semiconductors during molecular beam epitaxy e will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-564850