Doping of (Hg,Cd)Te with a Group VA element

Details Doping of (Hg,Cd)Te with a Group VA element Doping of (Hg,Cd)Te with a Group VA element

1977-10-31

1978-08-08

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148188, 136 89ST, 252 623ZT, 357 11, H01L 2104

Patent

active

041054776

ABSTRACT:
Mercury cadmium telluride having a quantity of an acceptor material selected from Group VA of the Periodic Table, consisting of nitrogen, phosphorus, arsenic and antimony and bismuth dispersed therein, preferably in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Most preferred are phosphorus, arsenic and antimony. Also disclosed are junctions formed by two adjacent regions of mercury cadmium telluride in which one of the regions contains an acceptor concentration increasing amount of nitrogen phosphorus, arsenic, bismuth or antimony. A method is disclosed which permits diffusion of these additives into a body of already formed mercury cadmium telluride.

REFERENCES:
patent: 3218203 (1965-11-01), Ruehrwein
patent: 3312571 (1967-04-01), Ruehrwein
patent: 3496024 (1970-02-01), Ruehrwein

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