Doping method of barrier region in semiconductor device

Details Doping method of barrier region in semiconductor device Doping method of barrier region in semiconductor device

1990-12-03

1994-08-16

Fourson, George

Fishing, trapping, and vermin destroying

437 41, 437 64, 437 69, 437160, 437161, 437950, 437968, 148DIG37, H01L 2176, H01L 21336

Patent

active

053386973

ABSTRACT:
An exposed active surface is prepared on a major surface of a semiconductor substrate. A source gas containing an impurity component is applied to the exposed active surface to adsorb thereon a film of the impurity component so as to form a barrier region along the major surface of the semiconductor substrate. A semiconductor device is formed on the major surface of the semiconductor substrate and is protected by the barrier region.

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