Doping mercury cadmium telluride with aluminum or silicon

Details Doping mercury cadmium telluride with aluminum or silicon Doping mercury cadmium telluride with aluminum or silicon

1977-01-06

1978-05-16

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148 33, H01L 21225

Patent

active

040897141

ABSTRACT:
A method of adjusting the donor concentration in a body of mercury cadmium telluride, or in regions of a body, comprising the steps of contacting the donor material region with a donor material of either aluminum or silicon and heating the body at a temperature of at least 550.degree. C for sufficient time to diffuse the donor material into the body. In a preferred embodiment, the heating is done in the presence of a source of mercury vapor pressure other than the body of semiconductor.

REFERENCES:
patent: 2810052 (1957-10-01), Bube et al.
patent: 3312571 (1967-04-01), Ruehrwein
patent: 3740690 (1973-06-01), Scharnhorst
patent: 3743553 (1973-07-01), Scott et al.
patent: 3767471 (1973-10-01), Kasper et al.
patent: 3884788 (1975-05-01), Maciolek et al.
patent: 3949223 (1976-04-01), Schmit et al.
patent: 3979232 (1976-09-01), Hager et al.
patent: 4003759 (1977-01-01), Koehler

Affiliated with

Also associated with

Rating

Doping mercury cadmium telluride with aluminum or silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Doping mercury cadmium telluride with aluminum or silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Doping mercury cadmium telluride with aluminum or silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1196082