Doping III-V compound semiconductor devices with group VI monola

Details Doping III-V compound semiconductor devices with group VI monola Doping III-V compound semiconductor devices with group VI monola

1988-03-28

1989-07-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG40, 148DIG65, 148DIG10, 156613, 357 232, 437111, 437126, 437912, 437965, H01L 21205

Patent

active

048450499

ABSTRACT:
An n-type III-V compound semiconductor comprises a plurality of monolayers of III-V compound semiconductor molecules having a layer-by-layer structure of group III element and group V element laminated alternately, and a group VI element-doped monolayer. The group VI element-doped monolayer is inserted into the III-V compound semiconductor molecules by occupying lattice points which were occupied by the group V element. The layers of the semiconductor are grown by Atomic Layer Epitaxy process.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
Ozeki et al., "Growth of AlGaAs Using a Pulsed Vapor Phase Method", IEEE Solid State Devices and Materials, 1987, pp. 475-478.
Kobayashi et al., "Flow-Rate Modulation Epitaxy of GaAs," Inst. Phys. Conf. Ser. No. 79, Chapter 13, 1985, pp. 737-738.
Pessa et al., "Atomic Layer Epitaxy . . . ," J. Appl. Phys. 54(10), Oct. 1983, pp. 6047-6050.
Erdman F. Schubert, A Fischer, and Klaus Ploog The Delta-Doped Field Effect Transistor IEEE Transactions on Electron Devices, vol. ED-33, No. 5, May 1986.
GaAS Atomic Layer Epitaxy by Hydride VPE by Usui and Sunakawa, Japanese Journal of Applied Physics, vol. 25, No. 3, Mar. 1986.
Tuomo Suntola Atomic Layer Epitaxy, Extended Abstracts of the 16th (1984 International) Conference on Solid State Materials and Devices.

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