Doping HgCdTe with Li

Details Doping HgCdTe with Li Doping HgCdTe with Li

1978-02-03

1978-08-08

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

136 89ST, 252 623ZT, 357 11, H01L 2104

Patent

active

041054784

ABSTRACT:
Mercury cadmium telluride carrier concentration can be adjusted by having a quantity of lithium dispersed therein in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Methods of forming the acceptor doped mercury cadmium telluride include diffusion of a quantity of lithium into an already existing body of mercury cadmium telluride. Formation of NP junctions and P-P+ regions are disclosed using the compositions and methods of the present invention.

REFERENCES:
patent: 3496024 (1970-02-01), Ruehrwein
patent: 4060432 (1977-11-01), Hall

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