Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1980-07-31
1982-09-21
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148186, 148187, 148190, H01L 21225
Patent
active
043505414
ABSTRACT:
A method for fabricating semiconductor devices comprising the steps of: forming on the main surface of a semiconductor substrate an inorganic photoresist layer having a first amorphous layer, which contains Se as a matrix component and includes an impurity for providing one conductivity type and a second silver, or a silver containing layer, formed on the first layer; exposing the inorganic photoresist layer with an exposure pattern; developing the exposed inorganic photoresist layer to form a patterned impurity containing inorganic photoresist layer as an impurity source layer; forming a heat resistive overcoating layer on the main surface of the semiconductor substrate, while covering the impurity source layer; and forming a doped region by diffusing impurity from the impurity source layer into a region of the substrate underlying the impurity source layer. The heat resistive overcoating layer may be an insulation layer having a window through which a conductive layer is connected to the doped region and is extended over the overcoating layer. The doped region is formed readily and accurately with relatively few process steps and with a pattern corresponding to an exposure pattern for the inorganic photoresist layer. The diffusion of the impurity from the impurity source layer into the substrate is accurately controlled so as to provide the doped region with a desired impurity concentration. Moreover, the evaporation of the impurity into the atmosphere during processing is minimized.
REFERENCES:
patent: 3532563 (1970-10-01), Genser
patent: 3801384 (1974-02-01), Schmidt
patent: 4127414 (1978-11-01), Yoshikawa et al.
patent: 4206026 (1980-06-01), Briska et al.
Hisaki Tomoko
Mizushima Yoshihiko
Ochi Osamu
Takeda Akitsu
Yoshikawa Akira
Nippon Telegraph & Telephone Public Corp.
Ozaki G.
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