Doped titanate glass-ceramic for grain boundary barrier layer ca

Details Doped titanate glass-ceramic for grain boundary barrier layer ca Doped titanate glass-ceramic for grain boundary barrier layer ca

1989-01-17

1989-09-26

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 252 623BT, 264 61, 501136, H01G 410, C04B 4114, H01B 302, H01B 108

Patent

active

048705390

ABSTRACT:
A high dielectric constant glass-ceramic material comprising small conducting grains based on BaTiO.sub.3 and/or SrTiO.sub.3 on the order of about 0.5-10.0 .mu.m surrounded by a thin microcrystalline insulating barrier layer at the grain boundary about 0.01-0.10 .mu.m thick wherein the conductivity of the grains is enhanced by addition of about 0.1-4.0 mol % of a dopant selected from among Group V elements, Ge and Si substantially incorporated in the bulk lattice of the grains upon Ti sites. A novel process for forming the glass-ceramic material is also disclosed.

REFERENCES:
patent: 4309295 (1982-01-01), McSweeney
patent: 4482933 (1984-11-01), Alexander
patent: 4739544 (1988-04-01), Okazaki et al.
patent: 4799127 (1989-01-01), Ono et al.

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