Doped stoichiometric lithium niobate crystals and method for...

Details Doped stoichiometric lithium niobate crystals and method for... Doped stoichiometric lithium niobate crystals and method for...

2005-06-14

2005-06-14

Boutsikaris, Leonidas (Department: 2872)

Optical: systems and elements

Holographic system or element

Having particular recording medium

C359S003000, C430S001000, C430S002000, C365S125000, C365S216000

Reexamination Certificate

active

06906835

ABSTRACT:
The present invention discloses a recording medium comprising an improved doped Stoichiometric Lithium Niobate (SLN) crystal for high-speed holographic data storage. The improved doped SLN has an extremely high optical damage resistance of more than 145 kW/cm2for power density of an incident laser beam along the c axis. The Recording time using the present improved doped SLN is advantageously very short and is about 1 second for a single hologram with a saturated diffraction efficiency of 28.7% at a recording laser beam density of 70 W/cm2. Reliable retrieval of a signal-image written at as low as 1 milliseconds has been performed in the Z-cut doped SLN. The present recording medium is an improved doped SLN of a Z-cut SLN crystal doped with Iron (Fe) and Terbium (Tb). The Terbium (Tb) content within the fluxed melts for growing the improved doped SLN ranges from 10 ppm to 140 ppm.

REFERENCES:
patent: 5717508 (1998-02-01), Stoll
patent: 6373806 (2002-04-01), Kitamura et al.
M.Lee et al., “Angle-multiplexed hologram storage in LiNbO3:Tb,Fe”, Optics Letters, 15(18), pp. 1337-1339(2000).
S.Tao et al., “Holographic properties of doped stochiometric LiNbO3 crystals”, vol. 4085, pp. 46-50(2001).

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