Doped SiO.sub.2 resistor and method of forming same

Details Doped SiO.sub.2 resistor and method of forming same Doped SiO.sub.2 resistor and method of forming same

1987-09-10

1989-09-19

Albritton, C. L.

Electrical resistors

With base extending along resistance element

Resistance element coated on base

338309, 357 51, 357 63, H01C 1012

Patent

active

048685372

ABSTRACT:
The concept of enhancing conduction through SiO.sub.2 by implanting ions of cesium (Cs) into the SiO.sub.2 is applied to the formation of a resistor in an integrated circuit. By implanting Cs ions into a layer of SiO.sub.2 in a controlled region of SiO.sub.2, and making contact to it via metal electrodes or a conductive polysilicon (poly-Si) layer, a resistor is formed. The resistance of the resistor is determined by the geometry chosen and by the implant dose and implant energy or energies.

REFERENCES:
patent: 3922708 (1975-11-01), Crowder et al.

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