Doped semiconductor vias to contacts

Details Doped semiconductor vias to contacts Doped semiconductor vias to contacts

1986-10-17

1988-02-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437234, 437 41, 437 26, 437967, 357 6, 357 91, 357 231, 357 61, 357 65, 427122, H01L 21263, H01L 2928

Patent

active

047229136

ABSTRACT:
In the manufacture of integrated circuits, an undoped wide band-gap semiconductor is used for the insulating layer to isolate the silicon substrate from the metal interconnection pattern. To provide conductive vias through the insulating layer for connection to the source and drain of the transistors of the circuit, the wide band-gap semiconductor is implanted with a dopant selectively in the portion overlying the source and drain for making the implanted portion of low resistivity and of the conductivity type of the source and drain. Preferably, carbon is the wide band-gap semiconductor and nitrogen is the dopant implanted.

REFERENCES:
patent: 4214918 (1980-07-01), Gat et al.
patent: 4472210 (1984-09-01), Wu et al.
patent: 4511445 (1985-04-01), Forrest et al.

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