Doped semiconductor nanocrystals and methods of making same

Details Doped semiconductor nanocrystals and methods of making same Doped semiconductor nanocrystals and methods of making same

2006-04-25

2009-12-15

McGinty, Douglas (Department: 1796)

Compositions

Electrically conductive or emissive compositions

Metal compound containing

C252S512000, C252S518100, C252S519500, C427S064000, C427S058000, C427S074000, C427S096100, C427S096200, C427S097100, C427S099200, C427S214000, C427S215000

Reexamination Certificate

active

07632428

ABSTRACT:
A method of synthesizing doped semiconductor nanocrystals. In one embodiment, the method includes the steps of combining a metal oxide or metal salt precursor, a ligand, and a solvent to form a metal complex in a reaction vessel; admixing an anionic precursor with the metal complex at a first temperature, T1, sufficient to form a plurality of host nanocrystals; doping a metal dopant onto the plurality of the host nanocrystals at a second temperature, T2, such that a layer of the metal dopant is formed substantially over the surface of a host nanocrystal that receives a metal dopant; and adding a mixture having the anionic precursor and the metal oxide or metal salt precursor at a third temperature, T3, into the reaction vessel to allow regrowth of host nanocrystals on the surface of the layer of the metal dopant formed substantially over the surface of a host nanocrystal that receives a metal dopant to form a plurality of doped nanocrystals, wherein the doped nanocrystals show a characteristic of semiconductor.

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