Doped polysilicon silicide semiconductor integrated circuit inte

Details Doped polysilicon silicide semiconductor integrated circuit inte Doped polysilicon silicide semiconductor integrated circuit inte

1979-03-01

1982-05-11

James, Andrew J.

357 59, 357 67, 357 23, H01L 2904, H01L 2348, H01L 2946

Patent

active

043297064

ABSTRACT:
An improved interconnection for semiconductor integrated circuits is provided by a member made of doped polycrystalline silicon and metal silicide that provides the simultaneous advantages of high conductivity and reduced overlap capacitance in multilayer integrated circuit devices. Such interconnecting members are useable to produce field effect transistor type devices.

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IBM Technical Disclosure Bulletin, vol. 17, No. 6, Nov. 74, "Reducing the Sheet Resistance of Polysilicon Lines in Integrated Circuits", by Rideout, pp. 1831 to 1833.

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