Doped plug for CCD gaps

Details Doped plug for CCD gaps Doped plug for CCD gaps

2007-05-30

2010-12-07

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S144000, C438S145000, C438S552000, C257SE21617, C257SE27083, C257SE27154, C257SE27162, C257SE29088

Reexamination Certificate

active

07846760

ABSTRACT:
A method and structure of providing a doped plug to improve the performance of CCD gaps is discussed. A highly-doped region is implemented in a semiconductor, aligned beneath a gap. The plug provides a highly-conductive region at the semiconductor surface, therefore preventing the development of a region where potential is significantly influenced by surface charges.

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