Doped photoconductive film including selenium and tellurium

Details Doped photoconductive film including selenium and tellurium Doped photoconductive film including selenium and tellurium

1985-05-20

1986-10-14

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 57, 430 61, G03G 508, G03G 509

Patent

active

046172483

ABSTRACT:
A structure of a photoconductive film related to a target of an image pickup tube of the photo conductivity type is disclosed. This photoconductive film is formed from mainly Se and Te is added in a central part thereof. Further, As, which is considered to form a deep trap level which captures electrons in Se and GaF.sub.3, etc. which form negative space charges by capturing electrons in Se are added in the region adjacent to the region where Te exists. In addition, a thickness of film in the region where GaF.sub.3, etc. exists is selected to be thinner (not smaller than 20 .ANG. and not larger than 90 .ANG.) than a value which has been adopted so far.

REFERENCES:
patent: 3890525 (1975-06-01), Hirai et al.
patent: 4040985 (1977-08-01), Shidara et al.
patent: 4463279 (1984-07-01), Shidara et al.

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