Doped photoconductive film comprising selenium and tellurium

Details Doped photoconductive film comprising selenium and tellurium Doped photoconductive film comprising selenium and tellurium

1982-05-21

1984-07-31

Welsh, John D.

Electric lamp and discharge devices

Cathode ray tube

Image pickup tube

252 623S, 357 31, 357 32, 430 95, 430 94, H01J 2945, H01J 3138

Patent

active

044632797

ABSTRACT:
A photoconductive film comprising a photo-conductive layer which is mainly made of selenium and a region added with tellurium in a direction of the thickness of the layer, wherein at least either one of a portion in a direction of hole flow of said region added with tellurium and a portion in the hole flow of another region which is located adjacent to said region added with tellurium is doped with at least one member selected from the group consisting of an oxide, a fluoride and elements which belong to the group II, III and VII, which are capable of forming a negative space charge in selenium, at a concentration in a range of 10 ppm to 1% by weight on an average. Typical examples of such oxide, fluoride and element include CuO, In.sub.2 O.sub.3, SeO.sub.2, V.sub.2 O.sub.5, MoO.sub.3, WO.sub.3, GaF.sub.2 InF.sub.3, Zn, Ga, In, Cl, I, Br and the like. The after image characteristic ascribable to incident light of high intensity can be significantly improved.

REFERENCES:
patent: 3890525 (1975-06-01), Hirai et al.
patent: 4330773 (1982-05-01), Shidara et al.
Chemical Abstracts vol. 95, col. 143052r.
Chemical Abstracts vol. 95 col. 178715m.

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