Doped-oxide diffusion of phosphorus using borophosphosilicate gl

Details Doped-oxide diffusion of phosphorus using borophosphosilicate gl Doped-oxide diffusion of phosphorus using borophosphosilicate gl

1982-05-11

1984-02-21

Childs, S. L.

Coating processes

Electrical product produced

Condenser or capacitor

427 93, 427 95, 4273977, B05D 512

Patent

active

044330081

ABSTRACT:
The invention is a method for diffusing phosphorus into the surface of a silicon substrate using borophosphosilicate glass as the phosphorus source.

REFERENCES:
patent: 3365793 (1968-01-01), Nechtow
patent: 3481781 (1979-12-01), Kern
patent: 3886569 (1975-05-01), Basi et al.
patent: 4191603 (1980-03-01), Garbarino
patent: 4349584 (1982-09-01), Flatley et al.
patent: 4363830 (1982-12-01), Hsu et al.
W. Kern et al. "Chemical Vapor Deposition of Silicate Glasses for Use with Silicon Devices", J. Electrochem. Soc., Apr. 1976.
W. Kern, "Chemical Vapor Deposition Systems for Glass Passivation of Integrated Circuits", Solid State Technology, Dec. 1975.
K. Chow et al., "Phosphorus Concentration of Chemical Vapor Deposited Phosphosilicate Glass", vol. 124, No. 7.

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