Doped oxide buried channel charge-coupled device

Details Doped oxide buried channel charge-coupled device Doped oxide buried channel charge-coupled device

1975-09-02

1977-05-17

Ozaki, G.

Metal treatment

Stock

Ferrous

357 91, 148 15, 148187, 148188, H01L 2978, H01L 21265

Patent

active

040245632

ABSTRACT:
Processes for manufacturing buried channel charge coupled devices (CCDs). After formation of an insulating layer at the surface of the CCD semiconductor substrate, a dopant material, suitable for the formation of the buried channel, is ion implanted into the insulating material. Subsequent diffusion steps cause the dopant to migrate into the underlying surface of the semiconductor substrate so as to define the buried channel region below the substrate surface.

REFERENCES:
patent: 3704178 (1972-11-01), Hill
patent: 3796932 (1974-03-01), Amelio et al.
patent: 3915755 (1975-10-01), Goetzberger et al.
patent: 3918997 (1975-11-01), Mohsen et al.
patent: 3931674 (1976-01-01), Amelio
patent: 3975753 (1976-08-01), Bharat
Walden et al., Bell System Technical Journal, Sept. 1972, pp. 1635-1640.
Kim et al., NEREM 72, 1972, pp. 161-164.

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