Doped organic semiconductor materials and process for their...

Details Doped organic semiconductor materials and process for their... Doped organic semiconductor materials and process for their...

2006-12-19

2006-12-19

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Having organic semiconductive component

C438S528000, C257SE51047, C257SE51049, C257SE51050

Reexamination Certificate

active

07151007

ABSTRACT:
The present invention relates to a process for the preparation of doped organic semiconductor materials having an increased charge carrier density and effective charge carrier mobility, by doping with a dopant, a process in which after mixing the dopant into the organic semiconductor material, hydrogen, carbon monoxide, nitrogen or hydroxyl radicals are split off and at least one electron is transferred to the semiconductor material or from the semiconductor material. The process is distinguished by the fact that an uncharged organic compound is used as dopant. Doped organic semiconductor materials are obtainable by one of the processes. The semiconductor materials are distinguished by the fact that the doped layer contains cations of at least one organic compound, the uncharged form of the organic compound being unstable in air.

REFERENCES:
patent: 5093698 (1992-03-01), Egusa
patent: 6746820 (2004-06-01), Furukawa
Werner et al (Pyronin B as a donor for n-type doping of organic thin films), Applied Physics Letters, vol. 82, No. 25, pp. 4495-4497.
Werner et al. (2003) “Pyronin B as a donor forn-type of organic thin films”, Applied Physics Letters 82(25): 4495-4497.
Yokoi et al. (1999) “Photochemical doping of TCNQ by photoinduced electron transfer and C-C cleavage of radical cation”, Chemistry Letters: 241-242.
Tang et al. (1987) “Organic electroluminescent diodes”, Appl. Phys. Lett. 51(12): 913-915.

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